发明名称 DEFECT CORRECTION METHOD AND MANUFACTURING METHOD FOR PHOTOMASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a defect correction method for a photomask using a scanning probe microscope, the method giving less damage on the photomask, and to provide a method for manufacturing a photomask using the method. <P>SOLUTION: The defect correction method for a photomask having a defective portion on a substrate is characterized in that the defective portion is removed with a probe of a scanning probe microscope while supplying a decomposition and dissolving chemical liquid that decomposes or dissolves the defective portion to the defective portion or supplying a pH adjusting chemical liquid the pH of which is adjusted to render the zeta potential of the defective portion into the same sign as the zeta potential of the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009063627(A) 申请公布日期 2009.03.26
申请号 JP20070228903 申请日期 2007.09.04
申请人 DAINIPPON PRINTING CO LTD 发明人 SHIMOMURA GOUYA;KURIHARA MASAAKI
分类号 G03F1/72;H01L21/027 主分类号 G03F1/72
代理机构 代理人
主权项
地址