| 摘要 |
The present invention can prevent occurrence of an off-leak current in the NMISFETs formed over the Si (110) substrate and having a silicided source/drain region. The semiconductor device includes N channel MISFETs (Metal Insulator Semiconductor Field Effect Transistors) which are formed over a semiconductor substrate having a main surface with a (110) plane orientation and have a source region and a drain region at least one of which has thereover nickel silicide or a nickel alloy silicide. Of these NMISFETs, those having a channel width less than 400 nm are laid out so that their channel length direction is parallel to a <100> crystal orientation.
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