PHOTOVOLTAIC ELEMENT AND ITS MANUFACTURING METHOD

摘要

A photovoltaic element (10) has a structure having a p-layer (3), an i-layer (4), an n-layer (5), and an electrode (6) which are successively layered on an insulating substrate (1) on which a transparent conductive film (2) is formed. The p-layer (3) is formed by a p-type a-Si:H. The n-layer (5) is formed by an n-type a-Si:H. The i-layer (4) is formed by a plurality of amorphous thin films (41) and a plurality of crystalline thin films (42). The amorphous thin films (41) and the crystalline thin films (42) are layered substantially in a vertical direction against the insulating substrate (1) so that the amorphous thin films (41) are brought into contact with the crystalline thin films (42). The amorphous thin films (41) are formed by the i-type a-Si:H and the crystalline thin films (42) are formed by the i-type poly-Si. The i-layer (4) has a film thickness of 300 nm to 1000 nm. Each of the amorphous thin films (41) and the crystalline thin films (42) has a film thickness of 10 nm to 20 nm.