| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gray scale mask, used in manufacturing a thin film transistor. <P>SOLUTION: This gray scale mask includes a source electrode mask region, a drain electrode mask region and a channel mask region between the source electrode mask region and the drain electrode mask region, wherein a plurality of shielding bars are uniformly installed vertically to the center line of the channel region in the channel region. In the gray scale mask, the shielding bar and the tip coming into contact with the source electrode mask region and the drain electrode mask region are pointed or trapezoidal. <P>COPYRIGHT: (C)2009,JPO&INPIT |
