| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To protect an insulating gate field-effect transistor in which a Schottky diode is built. <P>SOLUTION: A composite semiconductor device 20 has first and second main terminals 11 and 12, a main control terminal 13, a main MOSFET 14, a sub MOSFET 15, and a gate resistor 16. The main MOSFET 14 is connected between the first and the second main terminals 11 and 12. The sub MOSFET 15 is connected between a drain electrode D1 and a gate electrode G1 of the main MOSFET 14. A gate electrode G2 of the sub MOSFET 15 is connected to a source electrode S1 of the main MOSFET 14. The gate resistor 16 is connected between the main control terminal 13 and the gate electrode G1 of the main MOSFET 14. The sub MOSFET 15 turns on when a reverse voltage is applied to the main MOSFET 14. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
