| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element with high productivity. <P>SOLUTION: On an object 1 to be processed, cutting starting-point regions 8a and 8b are previously formed along cutting scheduled lines 5a and 5b. Here, the cutting starting-point region 8b includes a reformed region 7b formed by irradiation with laser light converged on inside the object 1 to be processed, and excludes a portion 34b crossing the cutting scheduled line 5a in a portion along the cutting scheduled line 5b. Consequently, when the object 1 to be processed is cut from the cutting starting-point region 8a as a starting point, an influence of the cutting starting-point region 8b becomes extremely small and a bar having a precise cleavage surface can be securely obtained. Therefore, the need to form a cutting starting-point region along the cutting scheduled line 5b for each of a plurality of bars is eliminated to improve the productivity of the semiconductor laser element. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
