| 摘要 |
A semiconductor device (60) is disclosed, comprising: a semiconductor die (62) including top and bottom surfaces, the semiconductor die (62) further comprising a source contact area (64), a gate contact area (66), and a drain contact area, wherein the contact areas (64, 66) are arranged on a selected one of the top and bottom surfaces; a drain lead (72) comprising a top surface, a bottom surface (72c), and a coupling portion (72a) coupled to the drain contact area of the semiconductor die (62); and an encapsulant (74) enclosing a portion of the semiconductor die (62) and a portion of the drain lead (72) such that the bottom surface (72c) of the drain lead (72) remains exposed. |
