发明名称 BAND-GAP VOLTAGE REFERENCE CIRCUIT
摘要 <p>A band-gap voltage reference circuit comprising first and second branches (309, 311; 609, 611 ) respectively including first and second groups of transistors (314 to 317; 614 to 617) of different emitter current conduction areas and current sources (319; 619) for running the first and second groups of transistors at different emitter current densities to generate respective base-emitter voltages, and output terminals (104, 106) connected to receive a regulated voltage (Vout) which is a function of the base-emitter voltages of the first and second groups of transistors (314 to 317; 614 to 617). Each of the first and second groups (314 to 317; 614 to 617) includes at least one npn-type transistor (314, 316; 615, 617) and at least one pnp transistor (315, 317; 614, 616) connected with their emitter-collector paths in series in the respective one of the branches (309, 311; 609, 611 ) so as to present cumulated base-emitter voltages across the respective group. The output voltage at the output terminals (104, 106) is responsive both to a difference (?Vb?p+n) between the cumulated base-emitter voltages of the first and second branches and to the cumulated base-emitter voltage (Vbep+n) of that one (309; 609) of the first and second groups with higher emitter current density.</p>
申请公布号 WO2009037532(A1) 申请公布日期 2009.03.26
申请号 WO2007IB54337 申请日期 2007.09.21
申请人 FREESCALE SEMICONDUCTOR, INC.;SICARD, THIERRY 发明人 SICARD, THIERRY
分类号 G05F3/30 主分类号 G05F3/30
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