HALF-TONE PHASE SHIFT BLANKMASK, HALF-TONE PHASE SHIFT PHOTOMASK AND IT'S MANUFACTURING METHOD

摘要

A half-tone phase shift blank mask is provided to maintain thin film property for a long time and to form a phase shift film having critical dimension of high quality. A half-tone phase shift blank mask is formed with one or more films selected from a phase shift film(2), light-shielding film, anti-reflective film and resist film on a transparent substrate(1). The phase shift film is formed from a sputtering target having the thickness of 2~7 mm and is used for a KrF lithography using the wavelength of 248 nm. The phase shift film comprises molybdenum 7~15 at%, silicon 55~63 at% and nitrogen 28~35 at%.