| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO-based substrate having a good quality surface suitable for crystal growth and to provide a processing method of a ZnO-based substrate. <P>SOLUTION: In the ZnO-based substrate, a principal plane is formed so that the excitation peak energy of 2p3/2 inner-shell electrons of Zn atom is in the range of 1,021.75 eV-1,022.25 eV when the principal plane of the side of a Mg<SB>X</SB>Zn<SB>1-X</SB>O (0≤X<1) substrate on which the crystal growth is conducted is spectrally diffracted by X-ray photoelectron. As the final processing of the surface of the side of the Mg<SB>X</SB>Zn<SB>1-X</SB>O substrate on which the crystal growth is conducted, an oxidation processing is conducted. In this way, in a ZnO-based substrate a damage-free principal plane can be prepared and a surface suitable for crystal growth is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
