QUANTUM DOT TYPE INFRARED RAY DETECTOR

摘要

PROBLEM TO BE SOLVED: To provide a quantum dot type infrared ray detector with more improved detection sensitivity for detecting an infrared ray.

SOLUTION: A quantum dot type infrared ray detector has a quantum dot structure 7 formed of interlayers 1, and a quantum dot layer 2 containing a quantum dot 4 with low energy potential to a carrier and sandwiched between the interlayers 1. The interlayer 1 and the quantum dot 4 are composed of a group III-V compound semiconductor having As a group V element. An AlAs layer 5 is provided on one of interfaces between the interlayer 1 and the quantum dot layer 2 containing the quantum dot 4 in such a manner that at least the quantum dot is covered. Detection sensitivity is improved by allowing a quantum dot/interlayer interface to be steep by preventing the mutual diffusion of elements constituting the interlayer 1 and the quantum dot 4.

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