| 摘要 |
A liquid crystal display device is provided to increase the storage capacitance even without enlarging a sustain electrode by interposing only a protective film on the same layer as a data line. Gate lines(22, 24, 26) are formed on an insulating substrate. In the insulating substrate, a gate insulating layer covers the gate lines. A semiconductor pattern(42) which is made of amorphous silicon as having from 800 to 1500Å thickness is formed on the gate insulating layer as overlapping with a gate electrode. A sustain electrode(68) is formed on the same layer as the data lines(62, 64, 65, 66), and forms storage capacitance by overlapping with a pixel electrode(82). A protective film which is made of silicon nitride or silicon oxide as having 500 to 2000Å thickness covers the data lines, sustain electrode and semiconductor pattern. |
