| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor and manufacturing method thereof, that employs a vertical photodiode and can prevent crosstalk between photodiode pixels. SOLUTION: The image sensor includes a first substrate where interconnections and a readout circuitry are formed, an image sensing device formed on the interconnections, and a light shield layer formed at a pixel boundary of the image sensing device. COPYRIGHT: (C)2009,JPO&INPIT
|
