| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing an SiC semiconductor element having good characteristics by removing carbon clusters which occur in a MOS interface during thermal oxidation of a silicon carbide semiconductor substrate and which reduce, for example, mobility of a silicon carbide MOSFET. SOLUTION: A thin oxide film 8 having a thickness of≤15 nm is formed by thermal oxidation and is annealed in gaseous N2, H2, NH3, Ar, or the like, and then an oxide film 9 thicker than the thin oxide film 8 is formed by deposition to obtain a prescribed oxide film thickness. COPYRIGHT: (C)2009,JPO&INPIT
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