| 摘要 |
PROBLEM TO BE SOLVED: To provide a schottky barrier diode capable of expressing a forward characteristic and a backward characteristic according to use application in spite of having one type of schottky metal. SOLUTION: This semiconductor device is fabricated by forming a schottky junction region with a semiconductor substrate 1 having a first conductivity type semiconductor layer 2 on a surface, a guard ring 6 comprising a second conductivity type semiconductor region extending into a layer from a surface of the semiconductor layer 2, and a metal layer 4 formed on the semiconductor layer surface surrounded by the guard ring 6. The schottky junction region includes: an eutectic region 7 having an eutectic layer formed between the metal layer 4 and the semiconductor layer 2; and an eutectic region surrounded by the eutectic region 7, having an insulation film pattern 5 interposed between the metal layer 4 and the semiconductor layer 2, and having an eutectic thickness smaller than that of the eutectic region. COPYRIGHT: (C)2009,JPO&INPIT |
