| 摘要 |
Target/backing plate constructions and methods of forming target/backing plate constructions are disclosed herein. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of titanium, tantalum, titanium zirconium, hafnium, niobium, vanadium, tungsten, copper or a combination thereof. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
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