| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which have a simple manufacturing process and can improve a gain, and to provide a method of manufacturing the same. SOLUTION: A laser unit 2 is constituted through epitaxial growth of a group III nitride semiconductor on a substrate 1 whose major surface is m face, a nonpolar surface. The laser unit 2 has an optical resonator 6 with a pair of resonator end faces 6A, 6B parallel to c face and a reflection part 7 which faces one resonator end face 6A and has a reflecting facet surface 7A tilting to a normal of the substrate major surface. Laser light 3 is emitted from the optical resonator 6 to a direction parallel to the substrate major surface. The laser light 3 is radiated toward the reflecting facet surface 7A. Light reflected at the reflection film 10 formed in the reflecting facet surface 7A is guided to a direction intersecting the substrate major surface. COPYRIGHT: (C)2009,JPO&INPIT
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