METHOD FOR DRY ETCHING OF HIGH-K FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for dry-etching of a High-k film having an etching speed difference between a rarefaction part and a dense part as well as an etching property with a small shape difference, while keeping high selectivity (ratio) of a metal oxide served as the High-k film to a foundation polysilicon film. SOLUTION: The method for dry-etching a High-k film by using plasma is configured to add a small amount of fluorocarbon gas with a high carbon element composition ratio to BCl3gas mixed with noble gas. COPYRIGHT: (C)2009,JPO&INPIT