| 摘要 |
A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0x1017 atoms/cm3, a resistivity variation within the plane of the wafer of at most 5% and, letting tox (cm) be the gate oxide film thickness and S (cm2) be the electrode surface area when determining the TZDB pass ratio, a density d (cm-3) of crystal originated particles (COP) having a size at least twice the gate oxide film thickness which satisfies the formula d<=-ln(0.9)/(S.tox/2). The wafers have an increased production yield and a small resistivity variation.
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