RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE

摘要

[PROBLEMS] To provide a resist underlayer film which does not cause intermixing with a photoresist formed thereon by coating and which is soluble in an alkaline developer and can be developed and removed simultaneously with the photoresist and a resist underlayer film forming composition for forming the resist underlayer film. [MEANS FOR SOLVING PROBLEMS] A resist under layer film forming composition to be used in the lithographic process in the production of semiconductor devices, which comprises (A) a branched polyhydroxystyrene wherein a repeating ethylene unit of a polyhydroxystyrene molecule is bonded to a benzene ring of another polyhydroxystyrene molecule, (B) a compound having at least two vinyl ether groups, and (C) a photoacid generator.