| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory semiconductor device and a method of manufacturing the same. SOLUTION: A nonvolatile memory semiconductor devic includes: a PN junction diode that is formed in a semiconductor substrate; an insulating film that is formed on the PN junction diode and has a via hole; and a resistive memory consisting of a first metal pattern formed in the via hole so as to be in contact with one region of the PN junction diode, an oxide film pattern formed on the first metal pattern, and a second metal pattern formed on the oxide film pattern. COPYRIGHT: (C)2009,JPO&INPIT
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