| 摘要 |
PROBLEM TO BE SOLVED: To enable laser annealing treatment not depending upon the height of an amorphous silicon film when the amorphous silicon film is crystallized by the laser annealing treatment. SOLUTION: A reference value is set to the height of a substance to be irradiated, the height of the substance is measured, the film thickness of the substance is obtained by a comparison and an arithmetic operation with a reference data and a database for the current (a voltage) of a laser oscillation driving laser beams corresponding to the film thickness is prepared. An operation is returned to an origin starting annealing, line annealing is conducted in conjunction with the measurement of the height of the substance to be irradiated and an annealing state is evaluated by irradiation-unevenness image acquisition and image processing after an irradiation on completion of annealing. Comparison with the optimum conditions of the quantity of energy correction in laser beams and acquisition of correction value of annealing treatment in the next line are conducted successively on the basis of the evaluation. Hereinafter, comparison and arithmetic operations with the reference data are conducted repeatedly a fixed number of times. COPYRIGHT: (C)2009,JPO&INPIT
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