| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively provide a semiconductor device capable of surely preventing a MOS transistor composing an electrostatic breakdown protecting element from being destructed. SOLUTION: This semiconductor device has an electrostatic breakdown protecting element 12 including a transistor 14 having a gate electrode 32c, a first impurity diffusion layer 50a of a first conductivity type which is electrically connected to a first external input and output terminal V<SB>DD</SB>, and a second impurity diffusion layer 50b of the first conductivity type which is electrically connected to a second external input and output terminal Sig through a resistance layer 18a of the first conductivity type. Metal silicide layers 44f, 44g are formed on the first impurity diffusion layer 50a and the second impurity diffusion layer 50b, the resistance layer is formed by introducing dopant impurities of the first conductivity type, and a mask layer 32d to prevent the metal silicide layers from being formed on the surface of the resistance layer is formed by a conductive film identical to the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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