| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus of manufacturing a magnetoresistive effect element having a high MR ratio even at a low RA. SOLUTION: The method includes a first step of sputtering a target to deposit it on the inner wall of a film depositing chamber, wherein the target contains a substance having a larger getter effect on an oxidative gas than MgO (here, excluding a metal and a semiconductor composed of at least one of Ta, CuN, CoFe, Ru, CoFeB, Ti, Mg, Cr and Zr), and after the first step, a second step of forming an MgO layer by sputtering by applying a high-frequency power to an MgO target in the film depositing chamber. COPYRIGHT: (C)2009,JPO&INPIT |
