发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device and its operation method in which a sufficient time for accessing data can be secured by making an internal control signal controlling an address signal applied from the outside active at an earlier point of time than the other internal control signal controlling a command signal applied from the outside. SOLUTION: A semiconductor memory device is provided with a command decoding part decoding an external command and outputting an internal command signal indicating performance of internal operation corresponding it, a control part activating an internal address signal in which an address input from the outside is decoded in accordance with the output of the command decoding part sooner than a strobe signal controlling the internal operation, and a decoding part generating a data access signal when both of the internal address signal and the strobe signal are activated. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009064537(A) 申请公布日期 2009.03.26
申请号 JP20080038228 申请日期 2008.02.20
申请人 HYNIX SEMICONDUCTOR INC 发明人 PARK MUN-PHIL
分类号 G11C11/4076;G11C11/407 主分类号 G11C11/4076
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