| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of microfabrication and reduction of power consumption by enabling to raise resistance of a cell and raise flexibility of design of a cell resistance, by contriving a structure of arranging a variable resistance film, and a method for manufacturing the same. SOLUTION: The nonvolatile memory device includes a first electrode 2, a second electrode 6 formed above the first electrode 2, a variable resistance film 4 which is formed between the first electrode 2 and the second electrode 6 and whose resistance value is increased or decreased depending on an electric pulse applied between the electrodes 2 and 6, and an interlayer insulating film 3 provided between the first electrode 2 and the second electrode 6. In the insulating film 3, an opening extending from its surface to the first electrode 2 is formed. The variable resistance film 4 is formed on the inner wall surface of the opening. The inner area of the opening formed by the variable resistance film 4 is filled with an embedded insulating film 5. COPYRIGHT: (C)2009,JPO&INPIT
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