| 摘要 |
A plasma enhanced chemical vapor deposition apparatus includes a receptacle having three chambers as an entering chamber, an intermediate chamber, and an exit chamber, four gates disposed before or behind or between the chambers for selectively closing the chambers and for allowing the chambers to be selectively vacuumed, one or more pumps coupled to each chamber for vacuuming each chamber, and for allowing the substrates to be treated with different processes or procedures in different chambers simultaneously and thus for allowing the time for treating the substrate to be greatly saved or economized, and thus for allowing the productivity to be greatly increased.
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