| 摘要 |
The invention relates to semiconductor instrument engineering. Method for obtaining silicon MIS transistor comprises forming pairs of n+ conductivity arias on surface of p-type silicon substrate and forming drain and source electrodes, forming gate insulator based on SiOand forming a gate electrode, realizing passivation processes and subsequent exposure the obtained transistor structure having channel length 2 to 10 mkm and width 50 mkm by X-rays with exposure dose power of non-monochromatic radiation 870 Р/с during 5-10 min. Transistor structure is exposed to pulse radiation with wavelengthmkm and pulse durationwith energy flux density 3,0-3,5 J/cm, laser radiation is realized from side being opposite to this surface of the silicon substrate. The invention provides improvement of parameters of MIS transistors and enhancing their time stability.. |
