发明名称 REACTOR FOR POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON PRODUCTION METHOD
摘要 <p>The reactor for polycrystalline silicon (1) is a reactor for polycrystalline silicon in which a silicon seed rod (4) installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod (4), and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port (6) installed on the bottom (2) of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port (6) so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from -10 cm to +5 cm on the basis of the upper end of the electrode (5) which retains the silicon seed rod.</p>
申请公布号 EP2039653(A2) 申请公布日期 2009.03.25
申请号 EP20080164540 申请日期 2008.09.17
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 ENDOH, TOSHIHIDE;ISHII, TOSHIYUKI;SAKAGUCHI, MASAAKI;HATAKEYAMA, NAOKI
分类号 C01B33/035;B01J19/26 主分类号 C01B33/035
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