A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.
申请公布号
EP2040302(A1)
申请公布日期
2009.03.25
申请号
EP20070767367
申请日期
2007.06.21
申请人
NATIONAL UNIVERSITY CORPORATION TOHOKU UNVERSITY;FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE
