| 摘要 |
A method for producing a poly(vinylidene fluoride) film is provided to be useful for nonvolatile ferroelectric memory required for a thin film less than 200 nm as well as the field using piezoelectricity and pyroelectricity, by preparing a polyvinylidene fluoride film having higher beta - crystal content. A poly(vinylidene fluoride) film is prepared by adding metal halide in the solution including a polyvinylidene fluoride compound. The metal halide is any one selected from the group consisting of calcium chloride, magnesium chloride, potassium iodide, ferric chloride, nickel chloride and sodium chloride.
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