METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method of manufacturing capacitor of the semiconductor device is provided to remove the capacitor oxide without the radioactive decay of the storage electrode by using the capacitor washing solution having Gamma costheta value. The solution for washing a capacitor having Gamma costheta value less than 0 excess 30 is manufactured. The capacitor including the trench exposing the contact plug is formed in the semiconductor substrate having the contact plug for the bottom electrode. The oxide film is formed on the top of the semiconductor board. The bottom electrode for capacitor is formed inside of the trench. The capacitor oxide is removed by performing the wet cleaning process. The semiconductor substrate is washed by performing the first cleaning process utilizing the capacitor washing solution. The semiconductor substrate is washed by performing the second cleaning process using the organic solvent. The substrate is dried by performing the drying substrate process.