| 摘要 |
A MOS transistor and method for manufacturing a transistor is provided to prevent an edge transistor from being formed by maintaining a constant doping density of high voltage NMOS transistor wall in a thermal process. A pad oxide film and a mask layer are successively laminated on the semiconductor substrate and a photosensitive pattern is formed on the mask layer. A trench(63) is formed inside the semiconductor substrate by performing an etching process with the mask pattern and the oxide film etch mask. A diffusion barrier is formed at the front of the semiconductor substrate including the trench, and the oxide film is formed front of the diffusion barrier. An insulating member such as oxide is gap-filled on the oxide film.
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