| 摘要 |
Affords Al x Ga 1- x N crystal growth methods, as well as Al x Ga 1- x N crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The Al x Ga 1- x N crystal (0 < x ‰¤ 1) growth method is a method of growing, by a vapor-phase technique, an Al x Ga 1- x N crystal 10, characterized by forming, in the growing of the crystal, at least one pit 10 p having a plurality of facets 12 on the major growth plane 11 of the Al x Ga 1- x N crystal 10, and growing the Al x Ga 1- x N crystal 10 with the at least one pit 10 p being present, to reduce dislocations in the Al x Ga 1- x N crystal 10. |
