发明名称 CMOS IMAGE SENSOR
摘要 A CMOS image sensor is provided to reduce the thermal noise and prevent deterioration of signals and maintain high sensitivity even at low luminance. The photo diode(100) produces photo-charge by the light. The transmission gate portion(200) transmits photo-charge to the first floating diffusion area(FDA1). The capacitance of the first floating diffusion region is increased. The transfer gate transmits the transmitted photo-charge to the second floating diffusion area(FDA2). The drive transistor(600) converts the photo-charge of the second floating diffusion area into the detection voltage. The reset transistor re-set the photo-charge of the second floating diffusion area. The selection transistor selects the output of the detection voltage.
申请公布号 KR20090031153(A) 申请公布日期 2009.03.25
申请号 KR20070097024 申请日期 2007.09.21
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, BYUNG HOON;CHOI, WON TAE;KWAK, BOO DONG
分类号 H01L27/146 主分类号 H01L27/146
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