| 摘要 |
903,026. Semi-conductor devices. CLEVITE CORPORATION. Aug. 10, 1959 [Aug. 19, 1958], No. 27238/59. Class 37. A method of treating a germanium PN semi-conductor device complete with electrodes comprises etching its surface, rinsing, and then immersing it in an aqueous solution containing at least 5% by weight hydrogen peroxide. Suitable temperatures for the solution are from 50‹ C. to the boiling point, 105‹ C., the treatment time varying with solution concentration and temperature. In a preferred embodiment an alloy,junction transistor is first electrolytically etched, rinsed in de-ionized water, and then immersed for 2 minutes in a 35% aqueous solution of hydrogen peroxide maintained at its boiling point. After rinsing in de-ionized water the device is encapsulated. The treatment is said to reduce the saturation current of PN junctions in diodes and transistors and to increase the current and power gain of transistors. |
