METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A formation method of a capacitor of a semiconductor memory device is provided to generate the capacitor with the high capacity by preventing the storage electrode pattern from being tumbled down. A storage node contact(150) is formed on the interlayer insulating film on a semiconductor substrate(100). A mold dielectric film(160) and a supporting layer are formed on the semiconductor substrate. The region including the storage node contact is exposed by patterning the mold dielectric film and the supporting layer. The exposed side of the supporting layer is oxidized. A bonding layer is formed on the lateral side of the supporting layer and the mold dielectric film. A conductive film(174) is formed on the structure of outcome. The conductive film is etched and the storage electrode separated into the cell unit is formed. The supporting layer is patterned.