<p>A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE></p>
申请公布号
EP1378591(B1)
申请公布日期
2009.03.25
申请号
EP20030254007
申请日期
2003.06.25
申请人
DIAMOND INNOVATIONS, INC.
发明人
D'EVELYN, MARK PHILIP;ROWLAND, LARRY BURTON;LUCEK, JOHN WILLIAM;VAGARALLI, SURESH SHANKARAPPA;ANTHONY, THOMAS RICHARD;LEVINSON, LIONEL MONTY;ARTHUR, STEPHEN DALEY