| 摘要 |
A semiconductor memory device and a refresh method thereof are provided to reduce a size of a cell by applying a phase change resistance device to a DRAM. A cell array includes a phase change resistance cell(UC), and reads/writes data. A register stores information of the cell array. A refresh control part performs a refresh operation into a specific refresh cycle by using the information stored in the register for improving a retention property of the data stored in the cell array. The phase change resistance cell includes a phase change resistance device and a switching device. The phase change resistance device(PCR) stores data corresponding to a change of a resistance by sensing a determination state changed according to a size of a current supplied through a bit line. The switching device(T) is connected between the phase change resistance device and a source line, and is controlled by a word line.
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