| 摘要 |
<p>A semiconductor device and a method of manufacture thereof are provided to relieve the electric field between the junction area and the gate by effectively controlling the depth of the junction area due to the work function difference. The element isolation film(102) defining the active area is formed in the semiconductor substrate(100). By etching the gate region of the exposed active area, the recess portion(R) and the side wall are formed. A part of the element isolation film of the semiconductor substrate is etched through the cleaning process. The bump type pattern(103) is formed in a part of the active area including the gate region through the cleaning process. The first gate insulating layer(104) is formed in the surface of the bump type pattern. The nitride film covering the bump type pattern including first gate insulating layer and element isolation film is formed. The first nitride film pattern is formed within the recess portion by performing the CMP process. The second nitride pattern is formed within the recess portion. The second gate insulating layer(108) is formed by the re-oxidation process.</p> |
