MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR

摘要

A multi-channel ESD device and method therefore are provided to control the clamp voltage in the range from low voltage to high voltage. The semiconductor substrate(25) of the first conductive type has the first concentration. The semiconductor layer(33) of the second conductive type is formed on the first face of the semiconductor substrate. The first semiconductor region is positioned between the first part of the semiconductor layer and the first face of the semiconductor substrate. The first P-N diode is formed in the semiconductor layer. Moreover, the first P-N diode is positioned at the upper part of the first part of the first semiconductor region. The first block structure surrounds the first P-N diode. The second P-N diode is positioned outside the first enclosed type polygon.