发明名称 |
Method of manufacturing substrate |
摘要 |
The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film. |
申请公布号 |
EP2040521(A2) |
申请公布日期 |
2009.03.25 |
申请号 |
EP20080164731 |
申请日期 |
2008.09.19 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
TAGUCHI, YUICHI;SHIRAISHI, AKINORI;SUNOHARA, MASAHIRO;MURAYAMA, KEI;SAKAGUCHI, HIDEAKI;HIGASHI, MITSUTOSHI |
分类号 |
H01L23/48;H01L33/44;H01L33/60;H01L33/62 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|