| 摘要 |
<p>An input/output line selecting circuit and semiconductor memory device using the same is provided to prevent a tRCD(Row Address to Column Address Delay) thermal deterioration by reducing an offset voltage rising phenomenon by a power noise which is generated in an application process of over drive method of a sense amplifier. An input/output line selecting circuit comprises a first switch, a second switch, and a third switch. The first switch delivers a signal of a first input/output line to a first input/output sense amplifier in a first lead operation. The second switch selects a first cell block connected to the first input/output line, and delivers the signal of the first input/output line to a second input/output sense amplifier in a second lead operation. The third switch selects a first cell block connected to a second input/output line, and delivers a signal of a second input/output line to the second input/output sense amplifier in the first lead operation.</p> |
