| 摘要 |
<p>A method of forming the dual-poly gate is provided to form the nitride film before the injection of the p type impurity and to prevent the loss of the P-type polysilicon layer by etching. The gate insulating layer(104) is formed on the semiconductor substrate(100) having the PMOS area and NMOS area. The polysilicon layer and nitride film(108) are successively formed on the gate insulating layer. The nitride film phase of the mask pattern covering the NMOS area is formed. The p type impurity is ion-implanted within the polysilicon layer of the PMOS area. The mask pattern is removed. The resultant substrate is heat-treated and the injected p type impurity is activated.</p> |
