发明名称 Image sensor fabrication method and structure
摘要 A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.
申请公布号 US7507598(B2) 申请公布日期 2009.03.24
申请号 US20050156794 申请日期 2005.06.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WENG FU-TIEN;HSIAO YU-KUNG;HSU HUNG-JEN;DAI YI-MING;KUO CHIN CHEN;TSENG TE-FU;CHANG CHIH-KUNG;DENG JACK;HSIUNG CHUNG-SHENG;CHANG BII-JUNQ
分类号 H01L21/00;H01L21/46;H01L21/78;H01L27/146;H01L29/768 主分类号 H01L21/00
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