发明名称 One-time-programmable memory
摘要 A one-time-programmable memory cell uses two complementary antifuses that are programmed in a complementary fashion such that only one of the two complementary antifuses is stressed by a programming voltage. The programming voltage stress one a particular one of the complementary antifuses indicates a logical state of the memory cell. For example, a logical high state may correspond to a first one of the complementary antifuses being stressed whereas a logical low state may correspond to the stressing of the remaining one of the complementary antifuses.
申请公布号 US7508694(B2) 申请公布日期 2009.03.24
申请号 US20070747390 申请日期 2007.05.11
申请人 NOVELICS, LLC 发明人 TERZIOGLU ESIN;WINOGRAD GIL I.;AFGHAHI MORTEZA CYRUS
分类号 G11C17/16 主分类号 G11C17/16
代理机构 代理人
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