Semiconductor device employing a transistor having a recessed channel region and method of fabricating the same,申请号KR20070052073-传众专利搜索

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发明名称	Semiconductor device employing a transistor having a recessed channel region and method of fabricating the same
摘要
申请公布号	KR100890256(B1)	申请公布日期	2009.03.24
申请号	KR20070052073	申请日期	2007.05.29
申请人		发明人
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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