发明名称 |
Image sensor having a highly doped and shallow pinning layer |
摘要 |
An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the trench and being a part of the photodiode, and a first conductivity type second epitaxial layer formed over the second conductivity type first epitaxial layer.
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申请公布号 |
US7508018(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20060482770 |
申请日期 |
2006.07.10 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHA HAN-SEOB |
分类号 |
H01L31/062;H01L27/146;H01L31/10;H04N5/335;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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