SEMICONDUCTOR ETCHING DEVICE AND METHOD AND ELECTRO STATIC CHUCK OF THE SAME DEVICE

摘要

A semiconductor etching device and method and an electro static chuck of the same device is provided to improve the rate of the operation by preventing an error in a process due to helium leak. A wafer inserted into an electrostatic chuck(40) of a chamber is fixed. The electrostatic chuck comprises a bottom electrode part receiving radio frequency power. An edge ring(42) is installed at the step region of the electrostatic chuck. The edge ring is provided in order to induce the exhaustion of Polymer. A lower quartz ring(44) supports the edge ring under the edge ring and surrounds the side wall of step region, and an upper quartz ring is located on the lower quartz ring. The upper quartz is formed to cover the edge ring and lower quartz ring. The upper quartz ring is extended in order to have the constant angle slope from the top of the edge ring.