Method for manufacturing substrate of Nitride chemical semiconductor,申请号KR20020047623-传众专利搜索

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发明名称	Method for manufacturing substrate of Nitride chemical semiconductor
摘要
申请公布号	KR100890085(B1)	申请公布日期	2009.03.24
申请号	KR20020047623	申请日期	2002.08.12
申请人		发明人
分类号	H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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